SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, will showcase several advances relating to high power SiC MOSFETs and modules at PCIM 2025.
PCIM takes place in Nuremberg from the 6th to the 8th May, with SemiQ partnering with alfatec to demonstrate its technology, which can be seen in Hall 4A, Booth 109 throughout the show.
This will include SemiQ’s recently launched third-generation SiC technologies and a wide range of modules to optimize systems for cost, resistance and thermal management. SiC technologies on display at PCIM will include:
1200 V SOT-227 MOSFET modules
Based on SemiQ’s third-generation SiC, these modules are available with an RDSon of 8.4 to 39 mΩ and deliver exceptional switching speeds and reduced losses with low junction to case thermal resistance.
Automotive-qualified QSiC 1200 V MOSFETs
The QSiC 1200 V MOSFETs are available in a bare die and TO-247 4L package and have received AEC-Q101 qualification for automotive systems. The third-generation SiC devices enable smaller die sizes while improving switching speeds and efficiency and are available with an RDSon between 16 and 80 mΩ.
1200 V full-bridge modules for solar inverters, energy storage and battery charging
SemiQ’s family of full-bridge modules deliver up to 333 W of power with a continuous drain of up to 102 A and sets a new standard for power density and efficiency in demanding DC applications.
1200 V six-pack modules for cost-optimized systems
Tested to over 1350 V, with 100% wafer-level burn in, SemiQ’s six-pack modules enable lower cost and more-compact system-level designs at large scale. Applications include AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging.
