In the PowerPAK package, Vishay Intertechnology Inc. has unveiled a new 150 V TrenchFET Gen V n-channel power MOSFET. The Vishay Siliconix SiRS5700DP offers 62.5% lower RthJC and 179% higher continuous drain current than previous-generation devices in the PowerPAK. It also reduces overall on-resistance by 68.3% and on-resistance times gate charge, a key figure of merit (FOM) for MOSFETs used in power conversion applications, by 15.4%.
The device launched today minimizes power losses from conduction with the lowest on-resistance in the industry (5.6 mΩ at 10 V) and on-resistance times gate charge FOM (336 mΩ*nC). This enables designers to increase efficiency in order to satisfy the demands of next-generation power supplies, including 6 kW AI server power systems. Furthermore, the PowerPAK SO-8S package’s incredibly low 0.45 °C/W RthJC allows for continuous drain current up to 144 A, which boosts power density while offering strong SOA capabilities.
For synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality, the SiRS5700DP is perfect. Servers, edge computing, supercomputers, data storage, telecom power supply, solar inverters, motor drives, power tools, and battery management systems are examples of typical uses. The MOSFET is 100% Rg and UIS certified, RoHS-compliant, halogen-free, and meets IPC-9701 requirements for more dependable temperature cycling. The PowerPAK SO-8 packaging is completely compatible with the device’s typical 6 mm by 5 mm footprint.
