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Home EV Tech Battery Technology

StoreDot Secures Patents to Boost Silicon‑Anode EV Charging

Aditi Singh by Aditi Singh
July 8, 2025
in Battery Technology
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StoreDot, a pioneer in extreme fast‑charging EV batteries, has significantly strengthened its intellectual property portfolio with the grant of U.S. Patent No. 12,261,324 and two Notices of Allowance covering its XFC Shield silicon-anode technology .

The newly protected technology addresses chronic challenges in silicon-dominant anode batteries—mainly swelling and degradation during charge cycles. Through its innovative XFC Shield framework, StoreDot said it now holds a “moat” around its extreme fast-charging chemistry, effectively blocking competitors from adopting similar silicon-based approaches without licensing.

StoreDot CEO Dr. Doron Myersdorf emphasized that the patents represent more than legal protection—they symbolize core technical advances enabling EVs to charge hundreds of miles in just minutes. He said these developments mark “a decisive moment for the future of electric mobility”.

Industry tests have already shown that StoreDot’s XFC cells can endure over 1,000 extreme fast-charge cycles—from 10 % to 80 % SoC in just 10 minutes—without more degradation than slower charging alternatives.

With fast charging and energy density both proven at the cell level, StoreDot is inviting automotive OEMs, battery makers, and tech firms to explore licensing options and collaborative development—a move that could usher in mass-market deployment of XFC batteries by 2027 .

These patent wins come as StoreDot supports charging demos—such as a Polestar 5 charging from 10 % to 80 % in 10 minutes—and continues scaling its patent shield strategy with over 100 ongoing filings. The company projects that its silicon-based XFC roadmap will deliver 100 miles of range in 5 minutes by next year, 4 minutes by 2026, and 3 minutes by 2028 .

Tags: EV battery innovationExtreme fast chargingFast charge technologySilicon anode EV techStoreDot battery patentsXFC battery solution
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